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IS61DDPB41M18AA1A2 - 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

IS61DDPB41M18AA1A2_5881469.PDF Datasheet


Part No.	IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2
Description	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
File Size	592.11K / 32 Page
Maker	Integrated Silicon Solution, Inc
Homepage	http://www.issi.com/
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Full text search : 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

Related Part Number

PART	Description	Maker
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61QDP2B251236A IS61QDP2B251236A1 IS61QDP2B251236	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...
K7D163674B-HC30 K7D163674B-HC27 K7D163674B-HC33 K7	512Kx36 & 1Mx18 SRAM	Samsung semiconductor http://
K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-F	512Kx36 & 1Mx18 QDR TM b4 SRAM	Samsung semiconductor
K7M161835B	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
K7B163635B	512Kx36 & 1Mx18 Synchronous SRAM	Samsung Electronics
KM736V989 KM718V089	512Kx36 & 1Mx18 Synchronous SRAM	Samsung Electronic Samsung semiconductor
K7Q163664B-FC16 K7Q161864B-FC16	512Kx36 & 1Mx18 QDR TM b4 SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7Q161862B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor

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